Processing the input file
=========================
COMMENT ---> Silicon MOSFET test-1
COMMENT ---> created on 07 apr.2005, J.M.Sellier
COMMENT ---> modified on 07 september 2007, J.M.Sellier
TRANSPORT MC ELECTRONS ---> Ok
FINAL TIME = 6e-15 ---> Ok
TIME STEP = 1e-15 ---> Ok
LENGTH X = 4e-07 ---> Ok
LENGTH Y = 4e-07 ---> Ok
XSPATIALSTEP = 80 ---> Ok
YSPATIALSTEP = 80 ---> Ok
COMMENT ---> definition of the material (all the device is made of Silicon)
MATERIAL SILICON X=[0,4e-07] Y=[0,4e-07] ---> Ok
COMMENT ---> Energy relaxation time
COMMENT ---> ======================
TAUW = 4e-13 ---> Ok
COMMENT ---> Definition of the doping concentration
COMMENT ---> ======================================
COMMENT ---> DONORDENSITY 0. 0. 0.4e-6 0.4e-6 1.e23
DONOR DENSITY 0 3.5e-07 1e-07 4e-07 1e+23 ---> Ok
DONOR DENSITY 3e-07 3.5e-07 4e-07 4e-07 1e+23 ---> Ok
COMMENT ---> ACCEPTORDENSITY 0. 0. 0.6e-6 0.2e-6 1.e23
COMMENT ---> ACCEPTORDENSITY 0. 0.15e-6 0.1e-6 0.2e-6 3.e23
COMMENT ---> ACCEPTORDENSITY 0.5e-6 0.15e-6 0.6e-6 0.2e-6 3.e23
COMMENT ---> Definition of the various contacts
COMMENT ---> ==================================
CONTACT DOWN 0 4e-07 SCHOTTKY -0.80562 ---> Ok
CONTACT LEFT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT RIGHT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT UP 0 1e-07 OHMIC 1e+23 -0.15346 ---> Ok
CONTACT UP 3e-07 4e-07 OHMIC 1e+23 0.84654 ---> Ok
COMMENT ---> CONTACT UP 0.1e-6 0.3e-6 INSULATOR 0.0
COMMENT ---> CONTACT UP 0.2e-6 0.4e-6 SCHOTTKY -0.8
COMMENT ---> CONTACT UP 0.5e-6 0.6e-6 OHMIC 1.0 3.e23 1.e20
COMMENT ---> Definition of the upper SiO2 interface
COMMENT ---> ======================================
OXYDE ---> UP 1.25e-07 2.75e-07 6e-09 0.4335
FINAL TIME = 6e-15 ---> Ok
COMMENT ---> Load the initial data for electrons
COMMENT ---> ===================================
COMMENT ---> LEID
WARNING! This command is DEPRECATED! Use QEP instead!
QUANTUM EFFECTIVE POTENTIAL = OFF --->Ok
MAXIMINI ---> Ok
COMMENT ---> SAVEEACHSTEP
LATTICE TEMPERATURE = 300 ---> Ok
STATISTICAL WEIGHT = 1000 ---> Ok
MEDIA = 500 ---> Ok
OUTPUT FORMAT = GNUPLOT/XD3D
COMMENT ---> end of MESFET test-1
=========================
EG[SILICON] = 1.11001
EG[GERMANIUM] = 0.63939
EG[GAAS] = 1.41892
EG[INSB] = 0.18001
EG[ALSB] = 1.63
EG[ALAS] = 2.224
EG[ALP] = 2.41001
EG[GAP] = 2.26999
EG[GASB] = 0.69999
EG[INAS] = 0.35597
EG[INP] = 1.34612
alphaK_gamma[GaAs] = 0.613487
alphaK_L[GaAs] = 0.242548
alphaK_gamma[InSb] = 5.40627
alphaK_gamma[AlSb] = 0.346093
alphaK_gamma[AlAs] = 0.242127
alphaK_gamma[AlP] = 0.166822
alphaK_gamma[GaP] = 0.273645
alphaK_gamma[GaSb] = 1.31933
alphaK_gamma[InAs] = 2.66504
alphaK_gamma[InP] = 0.629454
Computation Started at Wed May 15 17:54:20 2013
GAMMA[0] = 2.45152e+14
GAMMA[1] = 3.16873e+14
GAMMA[2] = 1.15461e+13
GAMMA[3] = 2.41324e+13
GAMMA[4] = 1.69536e+13
GAMMA[5] = 9.6505e+13
GAMMA[6] = 9.6505e+13
GAMMA[7] = 1.57055e+14
GAMMA[8] = 4.7392e+13
GAMMA[9] = 4.2269e+14
GAMMA[10] = 3.62917e+13
GAMMA[11] = 2.95834e+14
GAMMA[12] = 8.86275e+13
GAMMA[13] = 1.49119e+14
GAMMA[14] = 5.27287e+14
GAMMA[15] = 1.49119e+14
Initial Number of Electron Super-particles = 430500
Segmentation fault (core dumped)