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Re: [archimedes-discuss] archimedes-0.8.0 encounters SIGSEGV


From: janusz wozny
Subject: Re: [archimedes-discuss] archimedes-0.8.0 encounters SIGSEGV
Date: Thu, 24 Jul 2008 16:41:28 +0200
User-agent: Thunderbird 2.0.0.14 (X11/20080505)


True ...
But i think there is only one mistake in the

mosfet.input

Is:

CONTACT UP    0.0    0.1e-6 OHMIC          1.e23 -0.15346
CONTACT UP    0.3e-6 0.4e-6 OHMIC        1.e23 0.84654

Should be:

CONTACT UP    0.0    0.1e-6 OHMIC     -0.15346     1.e23
CONTACT UP    0.3e-6 0.4e-6 OHMIC   0.84654     1.e23

At least this makes the archimedes working :)) ...

Regards

Janusz

Debarshi Ray wrote:
Running archimedes-0.8.0 on tests/MOSFET/mosfet.input ends up in a
segmentation fault. Here is a GDB session:

(gdb) run mosfet.input
Starting program: /usr/bin/archimedes mosfet.input
Processing the input file
=========================
COMMENT --->  Silicon MOSFET test-1
COMMENT --->  created on 07 apr.2005, J.M.Sellier
COMMENT --->  modified on 07 september 2007, J.M.Sellier
TRANSPORT MC ELECTRONS ---> Ok
FINAL TIME = 6e-15 ---> Ok
TIME STEP = 1e-15 ---> Ok
LENGTH X = 4e-07 ---> Ok
LENGTH Y = 4e-07 ---> Ok
XSPATIALSTEP = 80 ---> Ok
YSPATIALSTEP = 80 ---> Ok
COMMENT --->  definition of the material (all the device is made of Silicon)
MATERIAL SILICON X=[0,4e-07] Y=[0,4e-07] ---> Ok
COMMENT --->  Energy relaxation time
COMMENT --->  ======================
TAUW = 4e-13 ---> Ok
COMMENT --->  Definition of the doping concentration
COMMENT --->  ======================================
COMMENT --->  DONORDENSITY    0.       0.         0.4e-6    0.4e-6    1.e23
DONOR DENSITY 0 3.5e-07 1e-07 4e-07 1e+23 ---> Ok
DONOR DENSITY 3e-07 3.5e-07 4e-07 4e-07 1e+23 ---> Ok
COMMENT --->  ACCEPTORDENSITY    0.       0.         0.6e-6    0.2e-6    1.e23
COMMENT --->  ACCEPTORDENSITY    0.       0.15e-6    0.1e-6    0.2e-6    3.e23
COMMENT --->  ACCEPTORDENSITY    0.5e-6   0.15e-6    0.6e-6    0.2e-6    3.e23
COMMENT --->  Definition of the various contacts
COMMENT --->  ==================================
CONTACT DOWN 0 4e-07 SCHOTTKY -0.80562 ---> Ok
CONTACT LEFT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT RIGHT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT UP 0 1e-07 OHMIC 1e+23 -0.15346 ---> Ok
CONTACT UP 3e-07 4e-07 OHMIC 1e+23 0.84654 ---> Ok
COMMENT --->  CONTACT UP    0.1e-6 0.3e-6 INSULATOR 0.0
COMMENT --->  CONTACT UP    0.2e-6 0.4e-6 SCHOTTKY -0.8
COMMENT --->  CONTACT UP    0.5e-6 0.6e-6 OHMIC     1.0 3.e23 1.e20
COMMENT --->  Definition of the upper SiO2 interface
COMMENT --->  ======================================
OXYDE ---> UP 1.25e-07 2.75e-07 6e-09 0.4335
FINAL TIME = 6e-15 ---> Ok
COMMENT --->  Load the initial data for electrons
COMMENT --->  ===================================
COMMENT --->  LEID
QUANTUM EFFECTS = NO --->Ok
MAXIMINI ---> Ok
COMMENT --->  SAVEEACHSTEP
LATTICE TEMPERATURE = 300 ---> Ok
STATISTICAL WEIGHT = 1000 ---> Ok
MEDIA = 500 ---> Ok
OUTPUT FORMAT = GNUPLOT/XD3D
COMMENT --->  end of MESFET test-1
=========================

EG[SILICON]      = 1.11001
EG[GERMANIUM]    = 0.63939
EG[GAAS]         = 1.41892
EG[INSB]         = 0.18001
EG[ALSB]         = 1.63
EG[ALAS]         = 2.224
EG[ALP]         = 2.41001
EG[GAP]         = 2.26999
EG[GASB]         = 0.69999
EG[INAS]         = 0.35597
EG[INP]         = 1.34612

alphaK_gamma[GaAs] = 0.613487
alphaK_L[GaAs]     = 0.242548
alphaK_gamma[InSb] = 5.41175
alphaK_L[InSb]     = 0.255633
alphaK_gamma[AlSb] = 0.346093
alphaK_L[AlSb]     = 0.162
alphaK_gamma[AlAs] = 0.242127
alphaK_L[AlAs]     = 0.169925
alphaK_gamma[AlP] = 0.19072
alphaK_L[AlP]     = 0.13292
alphaK_gamma[GaP] = 0.278701
alphaK_L[GaP]     = 0.0666753
alphaK_gamma[GaSb] = 1.29474
alphaK_L[GaSb]     = 0.534078
alphaK_gamma[InAs] = 2.63775
alphaK_L[InAs]     = 0.139431
alphaK_gamma[InP] = 0.624676
alphaK_L[InP]     = 0.0415223


Computation Started at Thu Jul 24 07:28:36 2008

GAMMA[0] = 2.47043e+14
GAMMA[1] = 3.16682e+14
GAMMA[2] = 1.2339e+14
GAMMA[3] = 1.5935e+14
GAMMA[4] = 1.49475e+14
GAMMA[5] = 1.44747e+14
GAMMA[6] = 1.44747e+14
GAMMA[7] = 1.35309e+15
GAMMA[8] = 1.84075e+14
GAMMA[9] = 5.9328e+15
GAMMA[10] = 9.35381e+14
GAMMA[11] = 6.83108e+15
GAMMA[12] = 1.56537e+15
GAMMA[13] = 2.03756e+15
GAMMA[14] = 2.55232e+15
GAMMA[15] = 2.03756e+15

Initial Number of Electron Super-particles = 430500

Program received signal SIGSEGV, Segmentation fault.
0x0000000000414526 in EMC () at ensemblemontecarlo.h:95
95            if(i<=1 && (EDGE[3][j][0]==1 || EDGE[3][j][0]==2)){
Missing separate debuginfos, use: debuginfo-install glibc.x86_64
(gdb) quit
The program is running.  Exit anyway? (y or n) y
address@hidden MOSFET]$
address@hidden MOSFET]$ gdb `which archimedes`
GNU gdb Red Hat Linux (6.6-45.fc8rh)
Copyright (C) 2006 Free Software Foundation, Inc.
GDB is free software, covered by the GNU General Public License, and you are
welcome to change it and/or distribute copies of it under certain conditions.
Type "show copying" to see the conditions.
There is absolutely no warranty for GDB.  Type "show warranty" for details.
This GDB was configured as "x86_64-redhat-linux-gnu"...
Using host libthread_db library "/lib64/libthread_db.so.1".
(gdb) run mosfet.input
Starting program: /usr/bin/archimedes mosfet.input
Processing the input file
=========================
COMMENT --->  Silicon MOSFET test-1
COMMENT --->  created on 07 apr.2005, J.M.Sellier
COMMENT --->  modified on 07 september 2007, J.M.Sellier
TRANSPORT MC ELECTRONS ---> Ok
FINAL TIME = 6e-15 ---> Ok
TIME STEP = 1e-15 ---> Ok
LENGTH X = 4e-07 ---> Ok
LENGTH Y = 4e-07 ---> Ok
XSPATIALSTEP = 80 ---> Ok
YSPATIALSTEP = 80 ---> Ok
COMMENT --->  definition of the material (all the device is made of Silicon)
MATERIAL SILICON X=[0,4e-07] Y=[0,4e-07] ---> Ok
COMMENT --->  Energy relaxation time
COMMENT --->  ======================
TAUW = 4e-13 ---> Ok
COMMENT --->  Definition of the doping concentration
COMMENT --->  ======================================
COMMENT --->  DONORDENSITY    0.       0.         0.4e-6    0.4e-6    1.e23
DONOR DENSITY 0 3.5e-07 1e-07 4e-07 1e+23 ---> Ok
DONOR DENSITY 3e-07 3.5e-07 4e-07 4e-07 1e+23 ---> Ok
COMMENT --->  ACCEPTORDENSITY    0.       0.         0.6e-6    0.2e-6    1.e23
COMMENT --->  ACCEPTORDENSITY    0.       0.15e-6    0.1e-6    0.2e-6    3.e23
COMMENT --->  ACCEPTORDENSITY    0.5e-6   0.15e-6    0.6e-6    0.2e-6    3.e23
COMMENT --->  Definition of the various contacts
COMMENT --->  ==================================
CONTACT DOWN 0 4e-07 SCHOTTKY -0.80562 ---> Ok
CONTACT LEFT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT RIGHT 0 4e-07 INSULATOR 0 ---> Ok
CONTACT UP 0 1e-07 OHMIC 1e+23 -0.15346 ---> Ok
CONTACT UP 3e-07 4e-07 OHMIC 1e+23 0.84654 ---> Ok
COMMENT --->  CONTACT UP    0.1e-6 0.3e-6 INSULATOR 0.0
COMMENT --->  CONTACT UP    0.2e-6 0.4e-6 SCHOTTKY -0.8
COMMENT --->  CONTACT UP    0.5e-6 0.6e-6 OHMIC     1.0 3.e23 1.e20
COMMENT --->  Definition of the upper SiO2 interface
COMMENT --->  ======================================
OXYDE ---> UP 1.25e-07 2.75e-07 6e-09 0.4335
FINAL TIME = 6e-15 ---> Ok
COMMENT --->  Load the initial data for electrons
COMMENT --->  ===================================
COMMENT --->  LEID
QUANTUM EFFECTS = NO --->Ok
MAXIMINI ---> Ok
COMMENT --->  SAVEEACHSTEP
LATTICE TEMPERATURE = 300 ---> Ok
STATISTICAL WEIGHT = 1000 ---> Ok
MEDIA = 500 ---> Ok
OUTPUT FORMAT = GNUPLOT/XD3D
COMMENT --->  end of MESFET test-1
=========================

EG[SILICON]      = 1.11001
EG[GERMANIUM]    = 0.63939
EG[GAAS]         = 1.41892
EG[INSB]         = 0.18001
EG[ALSB]         = 1.63
EG[ALAS]         = 2.224
EG[ALP]         = 2.41001
EG[GAP]         = 2.26999
EG[GASB]         = 0.69999
EG[INAS]         = 0.35597
EG[INP]         = 1.34612

alphaK_gamma[GaAs] = 0.613487
alphaK_L[GaAs]     = 0.242548
alphaK_gamma[InSb] = 5.41175
alphaK_L[InSb]     = 0.255633
alphaK_gamma[AlSb] = 0.346093
alphaK_L[AlSb]     = 0.162
alphaK_gamma[AlAs] = 0.242127
alphaK_L[AlAs]     = 0.169925
alphaK_gamma[AlP] = 0.19072
alphaK_L[AlP]     = 0.13292
alphaK_gamma[GaP] = 0.278701
alphaK_L[GaP]     = 0.0666753
alphaK_gamma[GaSb] = 1.29474
alphaK_L[GaSb]     = 0.534078
alphaK_gamma[InAs] = 2.63775
alphaK_L[InAs]     = 0.139431
alphaK_gamma[InP] = 0.624676
alphaK_L[InP]     = 0.0415223


Computation Started at Thu Jul 24 07:28:53 2008

GAMMA[0] = 2.47043e+14
GAMMA[1] = 3.16682e+14
GAMMA[2] = 1.2339e+14
GAMMA[3] = 1.5935e+14
GAMMA[4] = 1.49475e+14
GAMMA[5] = 1.44747e+14
GAMMA[6] = 1.44747e+14
GAMMA[7] = 1.35309e+15
GAMMA[8] = 1.84075e+14
GAMMA[9] = 5.9328e+15
GAMMA[10] = 9.35381e+14
GAMMA[11] = 6.83108e+15
GAMMA[12] = 1.56537e+15
GAMMA[13] = 2.03756e+15
GAMMA[14] = 2.55232e+15
GAMMA[15] = 2.03756e+15

Initial Number of Electron Super-particles = 430500

Program received signal SIGSEGV, Segmentation fault.
0x0000000000414526 in EMC () at ensemblemontecarlo.h:95
95            if(i<=1 && (EDGE[3][j][0]==1 || EDGE[3][j][0]==2)){
Missing separate debuginfos, use: debuginfo-install glibc.x86_64
(gdb) bt
#0  0x0000000000414526 in EMC () at ensemblemontecarlo.h:95
#1  0x00000000004146fd in updating (model=0) at updating.h:50
#2  0x0000000000416b1b in main (argc=<value optimized out>,
    argv=<value optimized out>) at archimedes.c:696
#3  0x000000391d21e2b4 in __libc_start_main () from /lib64/libc.so.6
#4  0x0000000000400bb9 in _start ()
(gdb)

I would like to know what you think of it before updating the Fedora
package to 0.8.0.

Happy hacking,
Debarshi









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